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this is preliminary information on a new product now in development or undergoing evaluation. details are subject to change without notice. august 2013 docid025117 rev 1 1/13 STE139N65M5 n-channel 650 v, 0.014 typ., 130 a, mdmesh? v power mosfet in a isotop package datasheet - preliminary data figure 1. internal schematic diagram features ? very low r ds(on) ? higher v dss rating ? higher dv/dt capability ? excellent switching performance ? 100% avalanche tested applications ? switching applications description this device is an n-channel mdmesh? v power mosfet based on an innovative proprietary vertical process technology, which is combined with stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. isotop $0y ' * 6 order code v ds @t jmax r ds(on) max i d STE139N65M5 710 v 0.017 w 130 a table 1. device summary order code marking packages packaging STE139N65M5 139n65m5 isotop tube www.st.com
contents STE139N65M5 2/13 docid025117 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
docid025117 rev 1 3/13 STE139N65M5 electrical ratings 13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate- source voltage 25 v i d drain current (continuous) at t c = 25 c 130 a i d drain current (continuous) at t c = 100 c 78 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 520 a p tot total dissipation at t c = 25 c 672 w i ar max current during repetitive or single pulse avalanche (pulse width limited by t jmax ) 17 a e as single pulse avalanche energy (starting t j = 25c, i d = i ar , v dd = 50v) 2400 mj dv/dt (2) 2. i sd 130 a, di/dt = 400 a/s, v dd = 400 v, v ds (peak) < v (br)dss. peak diode recovery voltage slope 15 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 0.186 c/w r thj-amb thermal resistance junction-ambient max 30 c/w
electrical characteristics STE139N65M5 4/13 docid025117 rev 1 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 650 v i dss zero gate voltage drain current (v gs = 0) v ds = 650 v v ds = 650 v, t c =125 c 10 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 65 a 0.014 0.017 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 15600 - pf c oss output capacitance - 365 - pf c rss reverse transfer capacitance -9-pf c o(tr) (1) 1. c o(tr) is a constant capacitance value that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . equivalent capacitance time related v gs = 0, v ds = 0 to 520 v - 1559 - pf c o(er) (2) 2. c o(er) is a constant capacitanc e value that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss . equivalent capacitance energy related v gs = 0, v ds = 0 to 520 v - 360 - pf r g intrinsic gate resistance f = 1 mhz open drain - 1.2 - q g total gate charge v dd = 520 v, i d = 65 a, v gs = 10 v (see figure 15 ) -363-nc q gs gate-source charge - 88 - nc q gd gate-drain charge - 164 - nc
docid025117 rev 1 5/13 STE139N65M5 electrical characteristics 13 table 6. switching times symbol parameter test conditions min. typ. max. unit t d(v) voltage delay time v dd = 400 v, i d = 80 a, r g = 4.7 , v gs = 10 v (see figure 16 ) (see figure 19 ) -295-ns t r(v) voltage rise time - 56 - ns t f(i) current fall time - 37 - ns t c(off) crossing time - 84 - ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current source-drain current (pulsed) - 130 520 a a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 520 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 130 a, v gs = 0 - 1.5 v t rr reverse recovery time i sd = 130 a, di/dt = 100 a/s v dd = 100 v (see figure 16 ) - 570 ns q rr reverse recovery charge - 15 c i rrm reverse recovery current - 53 a t rr reverse recovery time i sd = 130 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 16 ) - 720 ns q rr reverse recovery charge - 24 c i rrm reverse recovery current - 68 a
electrical characteristics STE139N65M5 6/13 docid025117 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized v ds vs temperature figure 7. static drain-source on-resistance i d 100 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max rds(on) 100s 1ms 10s tj=150c tc=25c single pulse 10ms am15995v1 i d 150 100 50 0 0 10 v ds (v) (a) 5 15 200 250 5v 6v 8v v gs =10v 300 7v 20 25 am16793v2 i d 150 100 50 0 4 v gs (v) 6 (a) 3 5 7 200 250 300 v ds =30 v 89 am16794v2 v ds -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.98 1.00 1.04 1.06 1.02 i d = 1ma 1.08 am10399v1 r ds(on) 0.012 0.011 0 40 i d (a) ( ) 20 60 0.013 v gs =10v 80 0.014 0.015 100 0.016 am12613v1
docid025117 rev 1 7/13 STE139N65M5 electrical characteristics 13 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. output capacitance stored energy figure 13. switching losses vs gate resistance (1) 1. eon including reverse recovery of a sic diode. v gs 6 4 2 0 0 100 q g (nc) (v) 400 8 200 300 10 v dd =520v i d =65a 12 300 200 100 0 400 500 v ds (v) v ds am12614v1 c 1000 100 10 1 0.1 10 v ds (v) (pf) 1 10000 100 ciss coss crss 100000 am12615v1 v gs(th) 1.00 0.90 0.80 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d = 250a am08899v1 r ds(on) 1.7 1.3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 2.1 i d = 65a v gs = 10v am08900v1 e oss 30 20 10 0 0 100 v ds (v) (j) 400 40 200 300 50 60 500 600 70 am12616v1 e 3000 2000 1000 0 0 20 r g ( ) ( j) 10 30 4000 5000 6000 40 i d =80a v dd =400v t j =25c eon eoff 7000 8000 am12617v1
test circuits STE139N65M5 8/13 docid025117 rev 1 3 test circuits figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times figure 17. unclamped inductive load test circuit figure 18. unclamped inductive waveform figure 19. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d $0y ,g 9jv 9gv 9gv ,g 9jv rq 7ghod\rii 7idoo 7ulvh 7f u r v v r y h u 9gv ,g 9jv,w rq rii 7idoo 7ulvh &rqfhswzdyhirupiru,qgxfwlyh/rdg7xuqrii
docid025117 rev 1 9/13 STE139N65M5 package mechanical data 13 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STE139N65M5 10/13 docid025117 rev 1 table 8. isotop mechanical data dim. mm min. typ. max. a 11.80 12.20 a1 8.90 9.10 b7.80 8.20 c0.75 0.85 c2 1.95 2.05 d 37.80 38.20 d1 31.50 31.70 e 25.15 25.50 e1 23.85 24.15 e2 24.80 g 14.90 15.10 g1 12.60 12.80 g2 3.50 4.30 f4.10 4.30 f1 4.60 5 p4 4.30 p1 4 4.40 s 30.10 30.30
docid025117 rev 1 11/13 STE139N65M5 package mechanical data 13 figure 20. isotop drawing 0041565_rev_i
revision history STE139N65M5 12/13 docid025117 rev 1 5 revision history table 9. document revision history date revision changes 13-aug-2013 1 initial release.
docid025117 rev 1 13/13 STE139N65M5 13 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not authorized for use in weapons. nor are st products designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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